ANHI · FETs & Power MOSFETs · MPN ASA80R900E
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| Drain to Source Voltage | 850V |
|---|---|
| Gate Charge(Qg) | 18.5nC |
| Current - Continuous Drain(Id) | 8.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 710mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 850.8pF |
N-Channel 850V 8.5A 43W Through Hole TO-220F