ANHI ASA70R600E

ANHI · FETs & Power MOSFETs · MPN ASA70R600E

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Specifications

Gate Charge(Qg)8nC
Drain to Source Voltage750V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation28W
RDS(on)600mΩ
Reverse Transfer Capacitance (Crss@Vds)3.55pF
Number1 N-channel
Input Capacitance(Ciss)599pF

Technical details

N-Channel 750V 8A 28W Through Hole TO-220F

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