ANHI ASA65R350E

ANHI · FETs & Power MOSFETs · MPN ASA65R350E

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage700V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)350mΩ
Number1 N-channel
Input Capacitance(Ciss)901pF

Technical details

N-Channel 700V 11A 31W Through Hole TO-220F

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