ANHI · FETs & Power MOSFETs · MPN ASA65R220E
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| Gate Charge(Qg) | 32.23nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.28pF |
| RDS(on) | 190mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.547nF |
650V 20A 33W Through Hole TO-220F