ANHI ASA60R180EFD

ANHI · FETs & Power MOSFETs · MPN ASA60R180EFD

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Specifications

Gate Charge(Qg)47.59nC
Drain to Source Voltage600V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation34W
RDS(on)140mΩ
Reverse Transfer Capacitance (Crss@Vds)5.07pF
Number1 N-channel
Input Capacitance(Ciss)2.389nF

Technical details

N-Channel 600V 28A 34W Through Hole TO-220F

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