ANHI · FETs & Power MOSFETs · MPN ASA60R170E
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| Gate Charge(Qg) | 37.84nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.79pF |
| RDS(on) | 170mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.76nF |
N-Channel 650V 25A 34W Through Hole TO-220F