ANHI ASA60R150E

ANHI · FETs & Power MOSFETs · MPN ASA60R150E

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Specifications

Gate Charge(Qg)47.59nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation34W
RDS(on)120mΩ
Reverse Transfer Capacitance (Crss@Vds)5.07pF
Number1 N-channel
Input Capacitance(Ciss)2.389nF

Technical details

28A 34W Through Hole TO-220F

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