ANHI · FETs & Power MOSFETs · MPN ASA60R090EFDA
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 65.32nC@10V |
| Output Capacitance(Coss) | 298.1pF |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 191W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.7pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.291nF |
| Type | N-Channel |
N-Channel 650V 47A 191W Through Hole TO-220F