ANHI · FETs & Power MOSFETs · MPN ADP120N080G2
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 58nC |
| Output Capacitance(Coss) | 62pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 188W |
| RDS(on) | 100mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.377nF |
| Type | N-Channel |
1.2kV 35A 4V 188W 100mΩ 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS