AGMSEMI AGMS5N50D

AGMSEMI · FETs & Power MOSFETs · MPN AGMS5N50D

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation24.5W
Reverse Transfer Capacitance (Crss@Vds)1.4pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)415pF

Technical details

N-Channel 500V 5A 24.5W Surface Mount TO-252

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