AGMSEMI AGML315ME

AGMSEMI · FETs & Power MOSFETs · MPN AGML315ME

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)17nC@10V;8nC@10V
Output Capacitance(Coss)71pF;74pF
Current - Continuous Drain(Id)5.6A;4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV;1.3V
Pd - Power Dissipation1.28W
Reverse Transfer Capacitance (Crss@Vds)55pF;62pF
RDS(on)25mΩ@10V;43mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)562pF;475pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 5.6A 1.28W Surface Mount SOT-23-6L

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