AGMSEMI · FETs & Power MOSFETs · MPN AGMH614C
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.72nF |
N-Channel 60V 50A 66W Through Hole TO-220