AGMSEMI AGMH612D

AGMSEMI · FETs & Power MOSFETs · MPN AGMH612D

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)181pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)161pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.97nF
Type-

Technical details

60V 58A 88W Surface Mount TO-252

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