AGMSEMI AGMH6080H

AGMSEMI · FETs & Power MOSFETs · MPN AGMH6080H

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)55.6nC@10V
Output Capacitance(Coss)203pF
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)176pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.71nF

Technical details

N-Channel 60V 66A 94W Surface Mount TO-263

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