AGMSEMI AGMH606H

AGMSEMI · FETs & Power MOSFETs · MPN AGMH606H

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Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)243pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)201pF
RDS(on)5.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.009nF

Technical details

60V 80A 83W Surface Mount TO-263

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