AGMSEMI · FETs & Power MOSFETs · MPN AGMH6035D
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 47nC@10V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 119W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
60V 125A 4V 119W 4.2mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS