AGMSEMI AGMH602H

AGMSEMI · FETs & Power MOSFETs · MPN AGMH602H

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)93nC@10V
Output Capacitance(Coss)1.168nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation224W
RDS(on)2.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)3.93nF

Technical details

N-Channel 60V 180A 224W Surface Mount TO-263

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