AGMSEMI AGMH403C-G

AGMSEMI · FETs & Power MOSFETs · MPN AGMH403C-G

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)489pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
RDS(on)2.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)1.948nF
TypeN-Channel

Technical details

N-Channel 40V 110A 70W Through Hole TO-220

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