AGMSEMI AGMH402C

AGMSEMI · FETs & Power MOSFETs · MPN AGMH402C

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Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)528pF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)393pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.926nF

Technical details

N-Channel 40V 170A 250W Through Hole TO-220

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