AGMSEMI · FETs & Power MOSFETs · MPN AGMH4012C
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 87nC@10V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.95nF |
| Current - Continuous Drain(Id) | 225A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.75nF |
N-Channel 40V 225A 114W Through Hole TO-220