AGMSEMI · FETs & Power MOSFETs · MPN AGMH18N20C
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Output Capacitance(Coss) | 121pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 158W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.054nF |
| Type | N-Channel |
N-Channel 200V 18A 158W Through Hole TO-220