AGMSEMI · FETs & Power MOSFETs · MPN AGMH12N10I
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| Gate Charge(Qg) | 21.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 460pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
| Type | - |
100V 65A 96W Through Hole TO-251