AGMSEMI · FETs & Power MOSFETs · MPN AGMH12N10C
No reviews yet — be the first to review AGMSEMI AGMH12N10C.
| Gate Charge(Qg) | 21.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 96W |
| RDS(on) | 9.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
N-Channel 100V 55A 96W Through Hole TO-220