AGMSEMI AGMH12H05H

AGMSEMI · FETs & Power MOSFETs · MPN AGMH12H05H

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)1.046nF
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.05nF

Technical details

N-Channel 120V 125A 208W Surface Mount TO-263

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