AGMSEMI AGMH065N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGMH065N10D

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)750pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.83nF
TypeN-Channel

Technical details

N-Channel 100V 100A 227W Surface Mount TO-252

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