AGMSEMI · FETs & Power MOSFETs · MPN AGMH065N10C
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 32nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 750pF |
| RDS(on) | 7.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.83nF |
N-Channel 100V 100A 227W Through Hole TO-220