AGMSEMI · FETs & Power MOSFETs · MPN AGMH03N10C
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 930pF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 215W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.47nF |
100V 160A 215W Through Hole TO-220