AGMSEMI AGMH035N10H

AGMSEMI · FETs & Power MOSFETs · MPN AGMH035N10H

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.95nF

Technical details

N-Channel 100V 160A 227W Surface Mount TO-263

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