AGMSEMI AGMH022P10D

AGMSEMI · FETs & Power MOSFETs · MPN AGMH022P10D

No reviews yet — be the first to review AGMSEMI AGMH022P10D.

Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)336pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation140W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Input Capacitance(Ciss)4.276nF

Technical details

100V 65A 140W Surface Mount TO-252

Related FETs & Power MOSFETs