AGMSEMI · FETs & Power MOSFETs · MPN AGMH022P10C
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| Gate Charge(Qg) | 52.1nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 336pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.276nF |
| Type | P-Channel |
P-Channel 100V 65A 250W Through Hole TO-220C