AGMSEMI AGMH022P10A

AGMSEMI · FETs & Power MOSFETs · MPN AGMH022P10A

No reviews yet — be the first to review AGMSEMI AGMH022P10A.

Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)336pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)24mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.276nF

Technical details

100V 65A 140W Surface Mount PDFN5x6-8

Related FETs & Power MOSFETs