AGMSEMI AGM85P10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM85P10D

No reviews yet — be the first to review AGMSEMI AGM85P10D.

Specifications

Gate Charge(Qg)72nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)86mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.7nF

Technical details

P-Channel 100V 19A 79W Surface Mount TO-252

Related FETs & Power MOSFETs