AGMSEMI AGM85P10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM85P10A

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Specifications

Gate Charge(Qg)72nC@10V
Drain to Source Voltage121V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)86mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.7nF
TypeP-Channel

Technical details

P-Channel 121V 19A 79W Surface Mount PDFN(5x6)

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