AGMSEMI AGM7N65F

AGMSEMI · FETs & Power MOSFETs · MPN AGM7N65F

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)98pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation97W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.101nF

Technical details

N-Channel 650V 7A 97W Through Hole TO-220F

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