AGMSEMI AGM6N20D

AGMSEMI · FETs & Power MOSFETs · MPN AGM6N20D

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)12nC@10V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)500mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF

Technical details

N-Channel 200V 7A 62.5W Surface Mount TO-252

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