AGMSEMI AGM665D

AGMSEMI · FETs & Power MOSFETs · MPN AGM665D

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Specifications

Gate Charge(Qg)8.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)400pF
Type-

Technical details

60V 15A 28W Surface Mount TO-252

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