AGMSEMI · FETs & Power MOSFETs · MPN AGM65R640D
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| Drain to Source Voltage | 650V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 13nC |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 61W |
| RDS(on) | 640mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 423pF |
650V 7A 61W Surface Mount TO-252