AGMSEMI AGM65N20AT

AGMSEMI · FETs & Power MOSFETs · MPN AGM65N20AT

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)85nC@10V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation338W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5nF

Technical details

N-Channel 200V 75A 338W Through Hole TO-247

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