AGMSEMI AGM628MD-M1

AGMSEMI · FETs & Power MOSFETs · MPN AGM628MD-M1

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Specifications

Gate Charge(Qg)24nC@10V
Configuration-
Drain to Source Voltage60V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation40W
RDS(on)75mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)705pF

Technical details

N-Channel+P-Channel Array 60V 20A 40W Surface Mount TO-252-4L

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