AGMSEMI AGM628MD

AGMSEMI · FETs & Power MOSFETs · MPN AGM628MD

No reviews yet — be the first to review AGMSEMI AGM628MD.

Specifications

Gate Charge(Qg)19nC@10V;25nC@10V
Drain to Source Voltage60V;60V
Output Capacitance(Coss)55pF;112pF
Current - Continuous Drain(Id)30A;25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.7V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)47pF;9pF
RDS(on)28mΩ@10V;41mΩ@-10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)856pF;770pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 30A 35W Surface Mount TO-252-4

Related FETs & Power MOSFETs