AGMSEMI AGM628MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM628MAP

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Specifications

Gate Charge(Qg)19nC@10V;25nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)67pF;120pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.7V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)56pF;12pF
RDS(on)30mΩ@10V;44mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)868pF;748pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 60V 21A 25W Surface Mount PDFN-8(3.3x3.3)

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