AGMSEMI AGM612MNA

AGMSEMI · FETs & Power MOSFETs · MPN AGM612MNA

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)182pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)11mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.006nF

Technical details

N-Channel Array 60V 50A 35W Surface Mount PDFN-8(5x6)

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