AGMSEMI AGM612MN

AGMSEMI · FETs & Power MOSFETs · MPN AGM612MN

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)13mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)700pF

Technical details

N-Channel Array 60V 11A 83W Surface Mount SOP-8

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