AGMSEMI AGM612MBQ

AGMSEMI · FETs & Power MOSFETs · MPN AGM612MBQ

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)11.7nC@10V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation20.8W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)13mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)510pF

Technical details

N-Channel Array 60V 29A 20.8W Surface Mount WQFN-8-EP(3.3x3.3)

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