AGMSEMI · FETs & Power MOSFETs · MPN AGM612MBQ
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 11.7nC@10V |
| Output Capacitance(Coss) | 170pF |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 20.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 13mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 510pF |
N-Channel Array 60V 29A 20.8W Surface Mount WQFN-8-EP(3.3x3.3)