AGMSEMI AGM612MBP

AGMSEMI · FETs & Power MOSFETs · MPN AGM612MBP

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)8.7nC@10V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation20.8W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)10.5mΩ@10V;15.7mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)760pF

Technical details

N-Channel Array 60V 29A 20.8W Surface Mount PDFN3.3x3.3

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