AGMSEMI AGM612D

AGMSEMI · FETs & Power MOSFETs · MPN AGM612D

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)9.9pF
RDS(on)11mΩ@10V;15mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

N-Channel 60V 50A 50W Surface Mount TO-252

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