AGMSEMI AGM60P85E

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P85E

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Specifications

Gate Charge(Qg)23.7nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)80mΩ@10V;97mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.45nF
TypeP-Channel

Technical details

P-Channel 60V 3A 2.5W Surface Mount SOT-23-3

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