AGMSEMI AGM60P35F

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P35F

No reviews yet — be the first to review AGMSEMI AGM60P35F.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)70nC@10V
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)198pF
RDS(on)17mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.55nF

Technical details

P-Channel 60V 52A 50W Through Hole TO-220F

Related FETs & Power MOSFETs