AGMSEMI AGM60P30C

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P30C

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)9.8nC@10V
Output Capacitance(Coss)114pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)49mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)740pF
TypeP-Channel

Technical details

P-Channel 60V 30A 34W Through Hole TO-220

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