AGMSEMI AGM60P30AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM60P30AP

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)9.8nC@10V
Output Capacitance(Coss)114pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)740pF
TypeP-Channel

Technical details

P-Channel 60V 30A 35W Surface Mount PDFN-8(3.3x3.3)

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